High pressure as an external factor, effectively governing a chaotic potential of crystalline semiconductors
I K Kamilov; M I Daunov; S F Gabibbov; A B Magomedov; I K Kamilov; Institute of Physics of Daghestan Science Center, Russian Academy of Sciences, 367003, Makhachkala, M. Yaragskogo str.,94, Russia; M I Daunov; Institute of Physics of Daghestan Science Center, Russian Academy of Sciences, 367003, Makhachkala, M. Yaragskogo str.,94, Russia; S F Gabibbov; Institute of Physics of Daghestan Science Center, Russian Academy of Sciences, 367003, Makhachkala, M. Yaragskogo str.,94, Russia; A B Magomedov; Institute of Physics of Daghestan Science Center, Russian Academy of Sciences, 367003, Makhachkala, M. Yaragskogo str.,94, Russia
Журнал:
Journal of Physics: Conference Series
Дата:
2008-07-01
Аннотация:
It has been revealed from pressure, temperature, magnetic and electric fields dependences of kinetic coefficients in doped compensated Ge<Au, Sb>, p-type InSb, InAs, CdSnAs<sub>2</sub><Cu>and HgTe, that the observed anomalies of electron transport in the listed above materials are linked to the presence of large-scale fluctuations of ionized impurity concentrations. It is shown, that the influence of chaotic potential begotten by these fluctuations becomes more noticeable when the temperature decreases or the pressure rises.
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