| Автор | I K Kamilov |
| Автор | M I Daunov |
| Автор | S F Gabibbov |
| Автор | A B Magomedov |
| Дата выпуска | 2008-07-01 |
| dc.description | It has been revealed from pressure, temperature, magnetic and electric fields dependences of kinetic coefficients in doped compensated Ge<Au, Sb>, p-type InSb, InAs, CdSnAs<sub>2</sub><Cu>and HgTe, that the observed anomalies of electron transport in the listed above materials are linked to the presence of large-scale fluctuations of ionized impurity concentrations. It is shown, that the influence of chaotic potential begotten by these fluctuations becomes more noticeable when the temperature decreases or the pressure rises. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | © 2008 IOP Publishing Ltd |
| Название | High pressure as an external factor, effectively governing a chaotic potential of crystalline semiconductors |
| Тип | paper |
| DOI | 10.1088/1742-6596/121/2/022006 |
| Electronic ISSN | 1742-6596 |
| Print ISSN | 1742-6588 |
| Журнал | Journal of Physics: Conference Series |
| Том | 121 |
| Первая страница | 22006 |
| Последняя страница | 22010 |
| Аффилиация | I K Kamilov; Institute of Physics of Daghestan Science Center, Russian Academy of Sciences, 367003, Makhachkala, M. Yaragskogo str.,94, Russia |
| Аффилиация | M I Daunov; Institute of Physics of Daghestan Science Center, Russian Academy of Sciences, 367003, Makhachkala, M. Yaragskogo str.,94, Russia |
| Аффилиация | S F Gabibbov; Institute of Physics of Daghestan Science Center, Russian Academy of Sciences, 367003, Makhachkala, M. Yaragskogo str.,94, Russia |
| Аффилиация | A B Magomedov; Institute of Physics of Daghestan Science Center, Russian Academy of Sciences, 367003, Makhachkala, M. Yaragskogo str.,94, Russia |
| Выпуск | 2 |
