We demonstrate that step-like conductance traces resulting from quantum efiects such as the conductance quantization or formation of single-atom contacts are possible in the nanowires formed at the metal-semiconductor junction. In the macroscopic metal-semiconductor interfaces the Schottky barrier is usually risen. For the nanowires formed at the contact between the germanium surface and cobalt or gold tip, the conductance traces are characterized by a high reproducibility and long duration of the conductance plateaus. The current-voltage characteristics of these contacts are strongly nonlinear similarly to a junction with the Schottky barrier.