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Автор Maciej Wawrzyniak
Автор Jan Martinek
Автор Bronisaw Susa
Дата выпуска 2009-01-01
dc.description We demonstrate that step-like conductance traces resulting from quantum efiects such as the conductance quantization or formation of single-atom contacts are possible in the nanowires formed at the metal-semiconductor junction. In the macroscopic metal-semiconductor interfaces the Schottky barrier is usually risen. For the nanowires formed at the contact between the germanium surface and cobalt or gold tip, the conductance traces are characterized by a high reproducibility and long duration of the conductance plateaus. The current-voltage characteristics of these contacts are strongly nonlinear similarly to a junction with the Schottky barrier.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт © 2009 IOP Publishing Ltd
Название Conductance quantization in nanowires formed at the metal-semiconductor interface
Тип paper
DOI 10.1088/1742-6596/146/1/012035
Electronic ISSN 1742-6596
Print ISSN 1742-6588
Журнал Journal of Physics: Conference Series
Том 146
Первая страница 12035
Последняя страница 12040
Выпуск 1

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