Stress relaxation mechanism by strain in the Si-SiO<sub>2</sub> system and its influence on the interface properties
Kropman, D; Mellikov, E; Karner, T; Medvid, A; Onufrijevs, P; Dauksta, E; Kropman, D; Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia;; Mellikov, E; Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia; Karner, T; Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia; Medvid, A; Riga Technical University, 14 Azenes Str., LV-1048, Riga, Latvia; Onufrijevs, P; Riga Technical University, 14 Azenes Str., LV-1048, Riga, Latvia; Dauksta, E; Riga Technical University, 14 Azenes Str., LV-1048, Riga, Latvia
Журнал:
IOP Conference Series: Materials Science and Engineering
Дата:
2011-12-02
Аннотация:
The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, scanning electron microscopy and samples deflection are presented. It is shown that stresses relaxation mechanism depend on the oxidation condition: temperature, cooling rate and oxide thickness. In the Si-SiO<sub>2</sub>-Si<sub>3</sub>N<sub>4</sub> system the stresses relaxation by the strain occurs due to the opposite sign of the thermal expansion coefficient of Si-SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> on Si. Laser irradiation allows modifying the system stresses.
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