| Автор | Kropman, D |
| Автор | Mellikov, E |
| Автор | Karner, T |
| Автор | Medvid, A |
| Автор | Onufrijevs, P |
| Автор | Dauksta, E |
| Дата выпуска | 2011-12-02 |
| dc.description | The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, scanning electron microscopy and samples deflection are presented. It is shown that stresses relaxation mechanism depend on the oxidation condition: temperature, cooling rate and oxide thickness. In the Si-SiO<sub>2</sub>-Si<sub>3</sub>N<sub>4</sub> system the stresses relaxation by the strain occurs due to the opposite sign of the thermal expansion coefficient of Si-SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> on Si. Laser irradiation allows modifying the system stresses. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | Published under licence by IOP Publishing Ltd |
| Название | Stress relaxation mechanism by strain in the Si-SiO<sub>2</sub> system and its influence on the interface properties |
| Тип | paper |
| DOI | 10.1088/1757-899X/25/1/012018 |
| Electronic ISSN | 1757-899X |
| Print ISSN | 1757-8981 |
| Журнал | IOP Conference Series: Materials Science and Engineering |
| Том | 25 |
| Первая страница | 12018 |
| Последняя страница | 12020 |
| Аффилиация | Kropman, D; Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia; |
| Аффилиация | Mellikov, E; Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia |
| Аффилиация | Karner, T; Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia |
| Аффилиация | Medvid, A; Riga Technical University, 14 Azenes Str., LV-1048, Riga, Latvia |
| Аффилиация | Onufrijevs, P; Riga Technical University, 14 Azenes Str., LV-1048, Riga, Latvia |
| Аффилиация | Dauksta, E; Riga Technical University, 14 Azenes Str., LV-1048, Riga, Latvia |
| Выпуск | 1 |
