Fabrication of a silicon nanostructure-based light emitting device
Vu, Van Thu; Nguyen, Duc Chien; Pham, Hong Duong; Chu, Anh Tuan; Pham, Thanh Huy; Vu, Van Thu; Faculty of Labour Protection, Vietnam Trade Union University, 169 Tay Son Road, Hanoi, Vietnam; Nguyen, Duc Chien; Institute of Engineering Physics, Hanoi University of Technology, 01 Dai Co Viet Road, Hanoi, Vietnam; Pham, Hong Duong; Institute of Material Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Hanoi, Vietnam; Chu, Anh Tuan; Institute of Material Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Hanoi, Vietnam; Pham, Thanh Huy; Hanoi Advanced School of Science and Technology (HAST), Hanoi University of Technology, 01 Dai Co Viet Road, Hanoi, Vietnam
Журнал:
Advances in Natural Sciences: Nanoscience and Nanotechnology
Дата:
2010-06-01
Аннотация:
Silicon nanostructure-based light emitting devices (nc_SiLED) have been fabricated using conventional microelectronic technologies. The emissive layer composed of silicon and silicon dioxide was deposited by magnetron co-sputtering. Under forward bias, a broad electroluminescence (PL) spectrum in the range 450–900 nm was observed, peaking at around 705 nm. The effect of Si content in the active layer on the electrical and optical properties of these devices was measured and discussed.
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