| Автор | Vu, Van Thu |
| Автор | Nguyen, Duc Chien |
| Автор | Pham, Hong Duong |
| Автор | Chu, Anh Tuan |
| Автор | Pham, Thanh Huy |
| Дата выпуска | 2010-06-01 |
| dc.description | Silicon nanostructure-based light emitting devices (nc_SiLED) have been fabricated using conventional microelectronic technologies. The emissive layer composed of silicon and silicon dioxide was deposited by magnetron co-sputtering. Under forward bias, a broad electroluminescence (PL) spectrum in the range 450–900 nm was observed, peaking at around 705 nm. The effect of Si content in the active layer on the electrical and optical properties of these devices was measured and discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2010 Vietnam Academy of Science & Technology |
| Название | Fabrication of a silicon nanostructure-based light emitting device |
| Тип | paper |
| DOI | 10.1088/2043-6254/1/2/025006 |
| Electronic ISSN | 2043-6262 |
| Print ISSN | 2043-6254 |
| Журнал | Advances in Natural Sciences: Nanoscience and Nanotechnology |
| Том | 1 |
| Первая страница | 25006 |
| Последняя страница | 25009 |
| Аффилиация | Vu, Van Thu; Faculty of Labour Protection, Vietnam Trade Union University, 169 Tay Son Road, Hanoi, Vietnam |
| Аффилиация | Nguyen, Duc Chien; Institute of Engineering Physics, Hanoi University of Technology, 01 Dai Co Viet Road, Hanoi, Vietnam |
| Аффилиация | Pham, Hong Duong; Institute of Material Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Hanoi, Vietnam |
| Аффилиация | Chu, Anh Tuan; Institute of Material Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Hanoi, Vietnam |
| Аффилиация | Pham, Thanh Huy; Hanoi Advanced School of Science and Technology (HAST), Hanoi University of Technology, 01 Dai Co Viet Road, Hanoi, Vietnam |
| Выпуск | 2 |
