This paper presents the fabrication of organic semiconductor (OS) rectifiers and an investigation of rectifying antenna (rectenna) under the effect of microwave power. As a source of microwaves, a patch antenna fed by a generator was used. The rectenna contains a built-in rectifier. The surface-type Ag/NiPc/Au cell, with organic semiconductor nickel phthalocyanine (NiPc) as the active material, was used as a rectenna. The rectifier was fabricated by thermal deposition of Ag, Au and NiPc thin films on thoroughly cleaned glass substrate. The measured I–V characteristics of the cell showed rectifying behavior. The rectenna was tested at frequency ranges of 8–16 GHz at different intensities of radiation and vertical and horizontal positions of the rectenna's axes. Under the effect of microwave power at the output of the rectenna, the output dc voltage and current were detected.