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Автор Karimov, Kh S
Автор Saleem, M
Автор Shah, M
Автор Shafique, S
Дата выпуска 2010-09-01
dc.description This paper presents the fabrication of organic semiconductor (OS) rectifiers and an investigation of rectifying antenna (rectenna) under the effect of microwave power. As a source of microwaves, a patch antenna fed by a generator was used. The rectenna contains a built-in rectifier. The surface-type Ag/NiPc/Au cell, with organic semiconductor nickel phthalocyanine (NiPc) as the active material, was used as a rectenna. The rectifier was fabricated by thermal deposition of Ag, Au and NiPc thin films on thoroughly cleaned glass substrate. The measured I–V characteristics of the cell showed rectifying behavior. The rectenna was tested at frequency ranges of 8–16 GHz at different intensities of radiation and vertical and horizontal positions of the rectenna's axes. Under the effect of microwave power at the output of the rectenna, the output dc voltage and current were detected.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт 2010 Vietnam Academy of Science & Technology
Название Investigation of rectenna for microwave power conversion
Тип paper
DOI 10.1088/2043-6254/1/3/035002
Electronic ISSN 2043-6262
Print ISSN 2043-6254
Журнал Advances in Natural Sciences: Nanoscience and Nanotechnology
Том 1
Первая страница 35002
Последняя страница 35005
Аффилиация Karimov, Kh S; GIK Institute of Engineering Sciences and Technology, Topi 23640, District Swabi, Pakistan; Physical Technical Institute of Academy of Sciences of Tajikistan, Aini Street 299/1, Dushanbe, 734063, Tajikistan
Аффилиация Saleem, M; GIK Institute of Engineering Sciences and Technology, Topi 23640, District Swabi, Pakistan; Government Shalimar College, Lahore, Pakistan
Аффилиация Shah, M; GIK Institute of Engineering Sciences and Technology, Topi 23640, District Swabi, Pakistan
Аффилиация Shafique, S; GIK Institute of Engineering Sciences and Technology, Topi 23640, District Swabi, Pakistan
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