| Автор | Kim-Ngan, Nhu-T H |
| Дата выпуска | 2010-12-01 |
| dc.description | Applications of ion beam techniques (IBA and IBMM) on nanoscaled thin films of selected materials (e.g. magnetite Fe<sub>3</sub>O<sub>4</sub>, uranium nitride UN) are presented. 1 MeV Ar<sup>+</sup> and Kr<sup>+</sup> ion beam with different ion fluences in the range of 10<sup>15</sup>–10<sup>17</sup> ions cm<sup>−2</sup> have been used to modify the film interfaces. Selected heterostructure interfaces were treated by subsequent thermal annealing. By analyzing the results obtained for the films in three different states (as-deposition, after annealing and after ion irradiation), the effects of ion beam mixing and interdiffusion were determined. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2010 Vietnam Academy of Science & Technology |
| Название | Control of interface properties, layer quality and interdiffusion in selected nanoscaled heterostructures |
| Тип | paper |
| DOI | 10.1088/2043-6262/1/4/045010 |
| Electronic ISSN | 2043-6262 |
| Print ISSN | 2043-6254 |
| Журнал | Advances in Natural Sciences: Nanoscience and Nanotechnology |
| Том | 1 |
| Первая страница | 45010 |
| Последняя страница | 45017 |
| Аффилиация | Kim-Ngan, Nhu-T H; Institute of Physics, Pedagogical University, 30-084 Kraków, Poland; Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 12116 Prague, Czech Republic |
| Выпуск | 4 |
