Epitaxial Pb(Zr,Ti)O<sub>3</sub> thin films for a MEMS application
Nguyen, Minh D; Vu, Hung N; Blank, Dave H A; Rijnders, Guus; Nguyen, Minh D; SolMateS B.V., Drienerlolaan 5, Building Hogekamp, 7522 NB Enschede, The Netherlands; Inorganic Materials Science, MESA Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands; International Training Institute for Materials Science, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam; Vu, Hung N; International Training Institute for Materials Science, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam; Blank, Dave H A; Inorganic Materials Science, MESA Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands; Rijnders, Guus; Inorganic Materials Science, MESA Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands
Журнал:
Advances in Natural Sciences: Nanoscience and Nanotechnology
Дата:
2011-03-01
Аннотация:
This research presents the deposition and device fabrication of epitaxial Pb(Zr,Ti)O<sub>3</sub> (PZT) thin films for applications in microelectromechanical systems (MEMS). A piezoelectric micro-membrane is described as an example. Using the pulsed laser deposition (PLD) technique and the MEMS microfabrication process, the piezo-membranes with diameters ranging from 200 to 500 μm were obtained. The displacement of piezo-membranes increased from 5.1 to 17.5 nm V<sup>−1</sup> with a piezoelectric-membrane diameter in the range of 200–500 μm. Furthermore, the effect of PZT film-thickness on the mechanical properties has been investigated. By using the conductive-oxide SrRuO<sub>3</sub> (SRO) layers as the electrodes, the degradation of both ferroelectric and piezoelectric properties is prevented up to 10<sup>10</sup> switching cycles.
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