| Автор | Guzman, L. |
| Дата выпуска | 1988 |
| dc.description | ABSTRACTA low energy ion implanter has been adequately modified in order to perform reactive ion beam enhanced deposition (RIBED) and dynamic recoil ion mixing experiments under controlled conditions in a high vacuum environment (better than 10<sup>-5</sup>Pa). The machine consists of a Duoplasmatron ion source, a mass analyzer, a target chamber adaptable for use with various samples, and a 2 crucible electron gun evaporator equipped with film thickness monitorIn this apparatus, independently controlled atom and ion beams of different species able to form the required compounds, impinge sequentially (or simultaneously) on a 4×8 cm<sup>2</sup>area with a good uniformity (10%). Ion mixing prevails in the first steps of the treatment, resulting in a good relative adhesion between substrate and film; then the RIBED film is grown up to typically 1 um, this thickness being equivalent to a total implanted dose of 1.0×10<sup>19</sup>ions/cm<sup>2</sup>with an excellent depth homogeneity and without sputtering limitations. |
| Формат | application.pdf |
| Издатель | Taylor & Francis Group |
| Копирайт | Copyright Taylor and Francis Group, LLC |
| Название | A NEW MACHINE FOR COMBINED VAPOUR DEPOSITION AND ION IMPLANTATION |
| Тип | research-article |
| DOI | 10.1080/10426918808953207 |
| Print ISSN | 0898-2090 |
| Журнал | Advanced Materials and Manufacturing Processes |
| Том | 3 |
| Первая страница | 279 |
| Последняя страница | 289 |
| Аффилиация | Guzman, L.; lnstituto per la Ricerca Scientifica e Tecnologica |
| Выпуск | 2 |
