| Автор | Moore, J. A. |
| Автор | Carter, G. |
| Автор | Tinsley, A. W. |
| Дата выпуска | 1975 |
| dc.description | Abstract20 keV monatomic and 40 keV diatomic As ions have been implanted into GaAs at room temperature and the resultant radiation damage measured by means of the channeling and back scattering of 1 MeV He<sup>+</sup> ions. The energy density within each diatomic cascade is approximately twice the density within the monatomic cascade. The radiation damage resulting from the diatomic implant is observed to be significantly larger (two to three times) than from the monatomic implants. This observation shows, quite directly, that when significant annealing of damage is occurring during implantation one cannot adequately describe the damage production in terms of quantities averaged over the implanted layer; account must be taken of the character (e.g. energy density) of the individual damage cascades. |
| Формат | application.pdf |
| Издатель | Taylor & Francis Group |
| Копирайт | Copyright Taylor and Francis Group, LLC |
| Название | A comparison of the radiation damage produced in gallium arsenide by monatomic and diatomic arsenic implants |
| Тип | research-article |
| DOI | 10.1080/00337577508242054 |
| Print ISSN | 0033-7579 |
| Журнал | Radiation Effects |
| Том | 25 |
| Первая страница | 49 |
| Последняя страница | 51 |
| Аффилиация | Moore, J. A.; Department of Physics, Brock University |
| Аффилиация | Carter, G.; Department of Electrical Engineering, University of Salford |
| Аффилиация | Tinsley, A. W.; Department of Electrical Engineering, University of Salford |
| Выпуск | 1 |
| Библиографическая ссылка | Tinsley, A. W. Private Communication. |
| Библиографическая ссылка | Haskell, J. D. 1971. Ph.D. Thesis Salford, , England: Salford University. |
| Библиографическая ссылка | Weisenberger, W. H., Picraux, S. T. and Vook, F. L. 1971. Rad. Effects, 9: 121 |
| Библиографическая ссылка | Harris, J. S. 1971. Ion Implantation in Semiconductors, Edited by: Ruge, I. and Graul, J. 157New York: Springer-Verlag. |
| Библиографическая ссылка | Picraux, S. T. and Vook, F. L. 1971. Rad. Effects, 11: 179 |
| Библиографическая ссылка | Andersen, H. H. and Bay, H. L. 1974. J. Appl. Phys., 45: 953 |
| Библиографическая ссылка | Bøgh, E. 1968. Can. J. Phys., 46: 653 |
| Библиографическая ссылка | Mayer, J. W., Eriksson, L. and Davies, J. A. 1970. Ion Implantation in Semiconductors, New York: Academic Press. |
| Библиографическая ссылка | Picraux, S. T., Weisenberger, W. H. and Vook, F. L. 1971. Rad. Effects, 7: 101 |
| Библиографическая ссылка | Eisen, F. H. 1973. Channeling, Edited by: Morgan, D. V. 415London: Wiley. |
| Библиографическая ссылка | Vook, F. L. 1972. Radiation Damage and Defects in Semiconductors, Edited by: Whitehouse, J. E. 60London: Institute of Physics. |
