| Автор | Mitchell, J. B. |
| Автор | Foti, G. |
| Автор | Howe, L. M. |
| Автор | Davies, J. A. |
| Автор | Campisano, S. U. |
| Автор | Rimini, E. |
| Дата выпуска | 1975 |
| dc.description | AbstractThe amount of damage present in germanium (and silicon) following : mplants of 200 keV H<sup>+</sup> or 300 keV D<sup>+</sup> at temperatures between 40–300°K has been measured using the channeling technique. The damage level is observed to increase strongly with decreasing implantation temperature. Damage profiles were obtained from the data by considering various scattering mechanisms, including single and plural scattering and a steady increase approximation treatment. For equal dose implants, deuterons create considerably more damage in germanium than protons. The ratio of deuteron damage to proton damage is significantly greater than the ratio of energy deposited in nuclear events for the two ions. The results of isochronal anneals at temperatures from 40 to 325°K on Ge crystals implanted at 40°K are also reported. A strong annealing stage is observed around 175°K; this is in good agreement with previous optical absorption studies of proton damage in germanium. |
| Формат | application.pdf |
| Издатель | Taylor & Francis Group |
| Копирайт | Copyright Taylor and Francis Group, LLC |
| Название | A channeling investigation of proton and deuteron damage in germanium |
| Тип | research-article |
| DOI | 10.1080/00337577508234750 |
| Print ISSN | 0033-7579 |
| Журнал | Radiation Effects |
| Том | 26 |
| Первая страница | 193 |
| Последняя страница | 199 |
| Аффилиация | Mitchell, J. B.; Chalk River Nuclear Laboratories, Atomic Energy of Canada Limited |
| Аффилиация | Foti, G.; Chalk River Nuclear Laboratories, Atomic Energy of Canada Limited; Short term visitor from the University of Catania |
| Аффилиация | Howe, L. M.; Chalk River Nuclear Laboratories, Atomic Energy of Canada Limited |
| Аффилиация | Davies, J. A.; Chalk River Nuclear Laboratories, Atomic Energy of Canada Limited |
| Аффилиация | Campisano, S. U.; University of Catania |
| Аффилиация | Rimini, E.; University of Catania |
| Выпуск | 3 |
| Библиографическая ссылка | Baeri, P., Campisano, S. U., Foti, G., Rimini, E. and Davies, J. A. 1975. Applied Physics Letters, 26: 424 |
| Библиографическая ссылка | Campisano, S. U., Foti, G., Grasso, F. and Rimini, E. 1973. Proc. of 5th Int. Conf. on Atomic Collisions in Solids. 1973, GatIinburg. pp.905 |
| Библиографическая ссылка | Bottiger, J., Davies, J. A., Lori, J. and Whitton, J. L. 1973. Nucl. Instr. Methods, 109: 579 |
| Библиографическая ссылка | Foti, G., Grasso, F., Quattrocchi, R. and Rimini, E. 1971. Phys. Rev., B3: 2169 |
| Библиографическая ссылка | Mayer, J. W., Eriksson, L. and Davies, J. A. 1970. Ion Implantation in Semiconductors, New York: Academic Press. |
| Библиографическая ссылка | Mitchell, J. B., Davies, J. A., Howe, L. M., Walker, R. S., Winterbon, K. B., Foti, G. and Moore, J. A. Aug. 1974. Proc. Int. Conf. on Ion Implantation Aug., Osaka, , Japan (in press) |
| Библиографическая ссылка | Bottiger, J. and Eisen, F. H. 1973. Thin Solid Films, 19: 239 |
| Библиографическая ссылка | Hirvonen, J. K., Brown, W. L. and Glotin, P. M. 1971. Ion Implantation in Semiconductors, Edited by: Ruge, I. and Graul, J. 8Berlin: Springer-Verlag. |
| Библиографическая ссылка | Bøgh, E. 1968. Can. J. Phys., 46: 653 |
| Библиографическая ссылка | Meyer, L. 1971. Phys. Stat. Sol., (b), 44: 253 |
| Библиографическая ссылка | Winterbon, K. B. 1974. private communication |
| Библиографическая ссылка | Winterbon, K. B. 1972. Rad. Effects, 13: 215 |
| Библиографическая ссылка | Picraux, S. T. and Stein, H. J. 1974. J. Appl. Phys., 45: 3784 |
| Библиографическая ссылка | Swanson, M. L. 1966. Can. J. Phys., 44: 2181 |
