| Автор | Evans, Bruce D. |
| Автор | Cain, Laurence S. |
| Дата выпуска | 1995 |
| dc.description | AbstractTwo experiments delineate the nature of the broad, weak, 3-eV absorption band in Al<sub>2</sub>O<sub>3</sub>: (1) anion self-implants clearly establish its association with aluminum vacancies, and (2) optical properties of this V-type center are exemplified after hole transfer from Ti<sup>+4</sup> impurities. These properties confirm a previous theoretical description. |
| Формат | application.pdf |
| Издатель | Taylor & Francis Group |
| Копирайт | Copyright Taylor and Francis Group, LLC |
| Тема | Defects |
| Тема | Ti<sup>+4</sup> |
| Тема | holes |
| Тема | alumina |
| Тема | ion-implantation |
| Тема | photobleaching |
| Название | A cation vacancy center in crystalline Al<sub>2</sub>O<sub>3</sub> |
| Тип | research-article |
| DOI | 10.1080/10420159508227241 |
| Electronic ISSN | 1029-4953 |
| Print ISSN | 1042-0150 |
| Журнал | Radiation Effects and Defects in Solids |
| Том | 134 |
| Первая страница | 329 |
| Последняя страница | 332 |
| Аффилиация | Evans, Bruce D.; United Solar Technologies, Inc. |
| Аффилиация | Cain, Laurence S.; Department of Physics, Davidson College |
| Выпуск | 1-4 |
| Библиографическая ссылка | Evans, B. D., Hendricks, H. D., Bazzarre, F. D. and Bunch, J. M. 1977. Ion Implantation in Semiconductors., 265–274. New York: Plenum. 1976 |
| Библиографическая ссылка | Turner, T. J. and Crawford, J. H. Jr. 1975. Solid State Comm., 17: 167 |
| Библиографическая ссылка | Bartram, R. H., Swenberg, C. E. and Fournier, J. T. 1965. Phys. Rev., 139: 941 |
| Библиографическая ссылка | Evans, B. D. 1994. J. Luminescence, 55: 6079 |
| Библиографическая ссылка | Sonder, E. and Sibley, W. A. 1972. Point Defects in Solids, Edited by: Crawford, J. Jr. and Slifkin, L. M. Vol. 1, 267269New York: Plenum. Chaps. 4: A. E. Hughes and B. Henderson, ibid., Chap. 7, pp. 445. |
