Ebic contrast in a polycrystalline semiconductor: Grain size dependence*
Talai, M. C.; Mekki, D. E.; Tarento, R. J.; Talai M. C.; Université de Annaba, Institut de Physique, B.P. 12, 23000 Annaba, Algeria; Mekki D. E.; Université de Annaba, Institut de Physique, B.P. 12, 23000 Annaba, Algeria; Tarento R. J.; Université de Paris-Sud, LPS, btiment 510, 91405 Orsay, France
Журнал:
The European Physical Journal Applied Physics
Дата:
1999
Аннотация:
Using the perturbation method (Born approximation), a theoretical model has been developed to account for the EBIC intensities and contrasts likely to occur in an n-type polycrystalline semiconductor, as a function of the grain size. The influence of the minority charge carrier diffusion length and the primary electron beam energy have also been examined, respectively.
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