The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE under nonequilibrium conditions
Ketata, M.; Ketata, K.; Koumetz, S.; Marcon, J.; Dubois, C.; Ketata M.; LEMI (UPRES EA 2654 du CNRS), IUT, Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France; Ketata K.; LEMI (UPRES EA 2654 du CNRS), IUT, Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France; Koumetz S.; LEMI (UPRES EA 2654 du CNRS), IUT, Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France; Marcon J.; LEMI (UPRES EA 2654 du CNRS), IUT, Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France; Dubois C.; LPM-INSA de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne, France
Журнал:
The European Physical Journal Applied Physics
Дата:
1999
Аннотация:
This study reports on Be diffusion in InGaAsP layers grown by gas source molecular beam epitaxy. The experimental structures consisted of a 2000 Å Be-doped (3 × 10<sup>9</sup> cm<sup>−3</sup>) In<sub>0.73</sub>Ga<sub>0.27</sub>As<sub>0.58</sub>P<sub>0.42</sub> layer sandwiched between two 5000 Å undoped In<sub>0.73</sub>Ga<sub>0.27</sub>As<sub>0.58</sub>P<sub>0.42</sub> layers. The samples were subjected to rapid thermal annealing in the temperature range from 700 to 900 °C with time durations of 10 to 240 s. Secondary ion mass spectrometry was employed for a quantitative determination of the Be depth profiles. Concentration profiles of Be in InGaAsP have been simulated according to two kick-out models: the first model involving neutral Be interstitials and singly positively charged Ga, In self-interstitials, and the second model involving singly positively charged Be interstitials and doubly positively charged Ga, In self-interstitials. Comparison with experimental data shows that the first kick-out model gives a better description.
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