| Автор | Meyer, Th. |
| Автор | Schmidt, M. |
| Автор | Engelhardt, F. |
| Автор | Parisi, J. |
| Автор | Rau, U. |
| Дата выпуска | 1999 |
| dc.description | This article investigates the electronic transport properties of ZnO/ CdS/ Cu(In,Ga)Se<sub>2</sub> heterojunction solar cells during and after illumination or forward bias in the dark. We observe a relaxation of the open circuit voltage under constant illumination as well as a relaxation of the voltage drop over the device under constant forward bias current in the dark. Both phenomena are accompanied by an increase of the sample capacitance. We introduce a general quantitative model concept for the open circuit voltage relaxation and related effects in heterojunction devices that explains the phenomena as a consequence of the persistent capture of charge carriers within the space charge region. We apply our concept to develop a specific quantitative model for the observed metastablity in Cu(In,Ga)Se<sub>2</sub> heterojunction solar cells. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1999 |
| Название | A model for the open circuit voltage relaxation in Cu(In,Ga)Se<sub>2</sub> heterojunction solar cells |
| Тип | research-article |
| DOI | 10.1051/epjap:1999228 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 8 |
| Первая страница | 43 |
| Последняя страница | 52 |
| Аффилиация | Meyer Th.; Faculty of Physics, University of Oldenburg, 26111 Oldenburg, Germany |
| Аффилиация | Schmidt M.; Faculty of Physics, University of Oldenburg, 26111 Oldenburg, Germany |
| Аффилиация | Engelhardt F.; Faculty of Physics, University of Oldenburg, 26111 Oldenburg, Germany |
| Аффилиация | Parisi J.; Faculty of Physics, University of Oldenburg, 26111 Oldenburg, Germany |
| Аффилиация | Rau U.; Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany |
| Выпуск | 1 |
