| Автор | Charbonnieras, A. R. |
| Автор | Tellier, C. R. |
| Дата выпуска | 1999 |
| dc.description | This paper is devoted to the theoretical study of the influence of the temperature and of the doping on the piezoresistance of N-type silicon. In the first step the fractional change in the resistivity caused by stresses is calculated in the framework of a multivalley model using a kinetic transport formulation based on the Boltzmann transport equation. In the second step shifts in the minima of the conduction band and the resulting shift of the Fermi level are expressed in terms of deformation potentials and of stresses. General expressions for the fundamental linear, π<sub>11</sub> and π<sub>12</sub>, and non-linear, π<sub>111</sub>, π<sub>112</sub>, π<sub>122</sub> and π<sub>123</sub>, piezoresistance coefficients are then derived. Plots of the non-linear piezoresistance coefficients against the reduced shift of the Fermi level or against temperature allow us to characterize the influence of doping and temperature. Finally some attempts are made to estimate the non-linearity for heavily doped semiconductor gauges. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1999 |
| Название | A kinetic formulation of piezoresistance in N-type silicon: Application to non-linear effects |
| Тип | research-article |
| DOI | 10.1051/epjap:1999192 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 7 |
| Первая страница | 1 |
| Последняя страница | 11 |
| Аффилиация | Charbonnieras A. R.; Laboratoire de Chronométrie Électronique et Piezoélectricité, École Nationale Supérieure de Mécanique et des Microtechniques, 26 chemin de l'Épitaphe, 25030 Besançon Cedex, France |
| Аффилиация | Tellier C. R.; Laboratoire de Chronométrie Électronique et Piezoélectricité, École Nationale Supérieure de Mécanique et des Microtechniques, 26 chemin de l'Épitaphe, 25030 Besançon Cedex, France |
| Выпуск | 1 |
