| Автор | Chehaidar, A. |
| Автор | Zwick, A. |
| Автор | Djafari-Rouhani, M. |
| Дата выпуска | 1998 |
| dc.description | Raman scattering can be used as an efficient probe with regard to the understanding of local structure in highly disordered films. This investigation is particularly fruitful if one takes into account Stokes, anti-Stokes and multiple-order processes. The interpretation is given in terms of the whole density of vibrational states. Some recent results obtained with amorphous Si, SiC and C films are presented. Comparison with other techniques, including numeric modelisations, are discussed. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1998 |
| Название | Topological and chemical disorder in group-IV amorphous semiconductors* |
| Тип | research-article |
| DOI | 10.1051/epjap:1998131 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 1 |
| Первая страница | 159 |
| Последняя страница | 162 |
| Аффилиация | Chehaidar A.; Département de Physique, Faculté des Sciences de Sfax 3038 Sfax, Tunisie |
| Аффилиация | Zwick A.; Laboratoire de Physique des Solides (ERS 5646 CNRS), Université Paul-Sabatier, 31062 Toulouse, France |
| Аффилиация | Djafari-Rouhani M.; Laboratoire de Physique des Solides (ERS 5646 CNRS), Université Paul-Sabatier, 31062 Toulouse, France |
| Выпуск | 2 |
