| Автор | Brochard, S. |
| Автор | Rabier, J. |
| Автор | Grilhé, J. |
| Дата выпуска | 1998 |
| dc.description | The nucleation of perfect or partial dislocations from a surface-step of a f.c.c. or diamond-like material is frequently observed. In a recent paper, it is shown how the "stress—stacking-fault energy" plane can be divided into three zones where a partial or a complete dislocation will or will not nucleate. In compound semiconductors, dislocations can dissociate into α or β partial dislocations with mobilities appreciably different. In this paper, this effect is taken into account and yields to large modifications in the partial or perfect dislocations nucleation conditions. The case of GaAs is specially examined. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1998 |
| Название | Nucleation of partial dislocations from a surface-step in semiconductors: a first approach of the mobility effect* |
| Тип | research-article |
| DOI | 10.1051/epjap:1998171 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 2 |
| Первая страница | 99 |
| Последняя страница | 105 |
| Аффилиация | Brochard S.; Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, BP 179, 86960 Futuroscope Cedex, France |
| Аффилиация | Rabier J.; Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, BP 179, 86960 Futuroscope Cedex, France |
| Аффилиация | Grilhé J.; Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, BP 179, 86960 Futuroscope Cedex, France |
| Выпуск | 2 |
