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Автор Tillay, V.
Автор Pailloux, F.
Автор Denanot, M. F.
Автор Pirouz, P.
Автор Rabier, J.
Автор Demenet, J. L.
Автор Barbot, J. F.
Дата выпуска 1998
dc.description By scratching the (0001)Si surface of 6H-SiC followed by annealing, dislocations were introduced in the crystal that were subsequently characterized by Transmission Electron Microscopy (TEM). Schottky diodes were then manufactured from the dislocated crystal and their electrical properties were studied by capacitance-voltage (C−V), current-voltage (I−V), and thermally-stimulated capacitance (TSCap) measurements. It was found that the deformation introduces deep traps Maynly located in the upper third of the bandgap promoting a significant increase in the series resistance of the diodes. The as-introduced dislocations were predominantly 30° partials and their core nature was determined to be Si(g) by the technique of Large Angle Convergent Beam Electron Diffraction (LACBED). The compensation effects observed after deformation are presumed to be caused not only by Si(g) dislocations but also by the other defects generated during the deformation step.
Формат application.pdf
Издатель EDP Sciences
Копирайт © EDP Sciences, 1998
Название Dislocations in 6H-SiC and their influence on electrical properties of n-type crystals*
Тип research-article
DOI 10.1051/epjap:1998173
Electronic ISSN 1286-0050
Print ISSN 1286-0042
Журнал The European Physical Journal Applied Physics
Том 2
Первая страница 111
Последняя страница 115
Аффилиация Tillay V.; Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, Bd3-Téléport 2, 86960 Futuroscope Cedex, France
Аффилиация Pailloux F.; Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, Bd3-Téléport 2, 86960 Futuroscope Cedex, France
Аффилиация Denanot M. F.; Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, Bd3-Téléport 2, 86960 Futuroscope Cedex, France
Аффилиация Pirouz P.; Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, USA
Аффилиация Rabier J.; Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, Bd3-Téléport 2, 86960 Futuroscope Cedex, France
Аффилиация Demenet J. L.; Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, Bd3-Téléport 2, 86960 Futuroscope Cedex, France
Аффилиация Barbot J. F.; Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, Bd3-Téléport 2, 86960 Futuroscope Cedex, France
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