| Автор | Guittoum, A. |
| Автор | Kerkache, L. |
| Автор | Layadi, A. |
| Дата выпуска | 1999 |
| dc.description | We have studied the effect of thickness on the structural, optical and electrical properties of In<sub>2</sub>O<sub>3</sub>:Sn (ITO) thin films. Two series of ITO thin films have been deposited onto glass substrates by DC sputtering at two partial pressures of oxygen (ppo): 4 × 10<sup>−4</sup> and 4.75 × 10<sup>−4</sup> mbar. Each series consists of samples with thickness ranging from 306 nm to 1440 nm. We observed a change of texture with thickness; the thinner films grow with a 〈111〉 preferred orientation; however as the thickness increased, the preferred orientation becomes in the 〈100〉 direction. The lattice constant and the grain size have also been obtained from the X-ray spectra. The energy gap, E <sub>g</sub>, has been obtained from the transmission curve; E <sub>g</sub> is found to decrease with increasing thickness for both series. The electrical resistivity ρ has been studied as a function of thickness, ppo and temperature (T). The temperature was varied from room temperature (RT) to 450 °C and back to RT; a hysteresis effect was observed in the ρ vs. T curve. Also, a minimum in ρ was observed, in all these samples, in the temperature range 260 to 280 °C. For these temperatures, we have studied the effect of annealing time on the electrical resistivity for samples having both textures. We noted that ρ increased with annealing time and reaches a saturation value equal to the RT temperature value. Hall effect experiments were done on all these samples. The concentration n and the mobility μ <sub>H</sub> were obtained. These parameters are found to be sensitive to the thickness and the texture of these films. All these results will be correlated and discussed. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1999 |
| Название | Effect of thickness on the physical properties of ITO thin films |
| Тип | research-article |
| DOI | 10.1051/epjap:1999214 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 7 |
| Первая страница | 201 |
| Последняя страница | 206 |
| Аффилиация | Guittoum A.; Institut de Physique, Université Ferhat Abbas, Sétif 19000, Algeria |
| Аффилиация | Kerkache L.; Institut de Physique, Université Ferhat Abbas, Sétif 19000, Algeria |
| Аффилиация | Layadi A.; Institut de Physique, Université Ferhat Abbas, Sétif 19000, Algeria |
| Выпуск | 3 |
