| Автор | Wang, Y. J. |
| Автор | Wang, J. F. |
| Автор | Li, C. P. |
| Автор | Chen, H. C. |
| Автор | Su, W. B. |
| Автор | Zhong, W. L. |
| Автор | Zhang, P. L. |
| Автор | Zhao, L. Y. |
| Дата выпуска | 2000 |
| dc.description | A new varistor system of SnO<sub>2</sub>-Bi<sub>2</sub>O<sub>3</sub>-Nb<sub>2</sub>O<sub>5</sub> was reported in this paper. The electrical field-current density characteristics of this system were investigated by doping different amounts of Bi<sub>2</sub>O<sub>3</sub> and sintering the samples at various temperatures. It is found that adding 0.75 mol% Bi<sub>2</sub>O<sub>3</sub> to Nb-doped SnO<sub>2</sub> ceramic resulted in maximum nonlinear coefficient and breakdown voltage with α = 14 and E <sub>0.5</sub> = 19 525 V/cm. To improve the density as well as the nonlinearity of this system, different amounts of Co<sub>2</sub>O<sub>3</sub> were added. The optimal conditions for the best nonlinearity were 1300 °C with 0.03 mol% Co<sub>2</sub>O<sub>3</sub> addition. Deviation from this doping content, toward either higher or lower Co<sub>2</sub>O<sub>3</sub> content, causes the deterioration of I−V characteristics. It can be concluded that the incorporation of cobalt oxides into SnO<sub>2</sub>-based varistors improves the nonlinearity in the low and intermediate current density regions because of the increased barrier height $(\Phi_{\rm B})$. The experimental results were explained with the defect barrier model for SnO<sub>2</sub>-based varistors. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 2000 |
| Название | Improved varistor nonlinearity via sintering and acceptor impurity doping |
| Тип | research-article |
| DOI | 10.1051/epjap:2000157 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 11 |
| Первая страница | 155 |
| Последняя страница | 158 |
| Аффилиация | Wang Y. J.; Physics Department of Shandong University, Jinan Shandong 250100, P.R. China |
| Аффилиация | Wang J. F.; Physics Department of Shandong University, Jinan Shandong 250100, P.R. China |
| Аффилиация | Li C. P.; Physics Department of Shandong University, Jinan Shandong 250100, P.R. China |
| Аффилиация | Chen H. C.; Physics Department of Shandong University, Jinan Shandong 250100, P.R. China |
| Аффилиация | Su W. B.; Physics Department of Shandong University, Jinan Shandong 250100, P.R. China |
| Аффилиация | Zhong W. L.; Physics Department of Shandong University, Jinan Shandong 250100, P.R. China |
| Аффилиация | Zhang P. L.; Physics Department of Shandong University, Jinan Shandong 250100, P.R. China |
| Аффилиация | Zhao L. Y.; The Thunder Defense Center of Shandong, Jinan Shandong 250100, P.R. China |
| Выпуск | 3 |
