| Автор | Lacassie, F. |
| Автор | Kaplan, D. |
| Автор | De Saxce, Th. |
| Автор | Pignolet, P. |
| Дата выпуска | 2000 |
| dc.description | We study gallium arsenide (GaAs) high voltage photoconductive switches triggered by a 30 ps neodymium: yttrium aluminium garnet (Nd:YAG) laser, i.e. using photons of energy smaller than the band gap. We measure optical absorption at Brewster incidence under optical pulse excitation and determine the extrinsic one photon and intrinsic two photon absorption coefficients. Analyzing the photoconductive resistance under different power densities of laser radiation, and using the absorption data, we demonstrate that only about 20% of the photons absorbed by the extrinsic process are converted into free electrons. We conclude that high efficiencies can only be obtained by using two photon absorption, which is feasible with ultrafast lasers and focussed beams. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 2000 |
| Название | Two photon absorption in semi-insulating gallium arsenide photoconductive switch irradiated by a picosecond infrared laser |
| Тип | research-article |
| DOI | 10.1051/epjap:2000162 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 11 |
| Первая страница | 189 |
| Последняя страница | 195 |
| Аффилиация | Lacassie F.; Société Alliage, 75005 Paris, France |
| Аффилиация | Kaplan D.; Société Alliage, 75005 Paris, France |
| Аффилиация | De Saxce Th.; Thomson Shorts systèmes SA, 92223 Bagneux, France |
| Аффилиация | Pignolet P.; LGE, Université de Pau, 64000 Pau, France |
| Выпуск | 3 |
