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Автор Hanzaz, M.
Автор Bouhdada, A.
Автор Monroy, E.
Автор Muñoz, E.
Автор Gibart, P.
Автор Omnès, F.
Дата выпуска 2000
dc.description We propose to model the spectral response of p-n junction photodetectors based on gallium nitride and related AlGaN alloys. The model is based on the resolution of the differential equations that govern the excess carrier variation in each layer of the photodiode taking into account all the physical parameters, in particular the presence of deep trap levels in the forbidden gap. We notice that the theoretical results are in good agreement with the experiments. We have also analysed the effect of the recombination velocity at the illuminated surface, as well as the impact of the thickness and the doping density of the p-type layer (illuminated zone) on the spectral response magnitude.
Формат application.pdf
Издатель EDP Sciences
Копирайт © EDP Sciences, 2000
Название Modeling of the spectral response of Al<sub> x </sub>Ga<sub>1−x </sub>N p-n junction photodetectors
Тип research-article
DOI 10.1051/epjap:2000137
Electronic ISSN 1286-0050
Print ISSN 1286-0042
Журнал The European Physical Journal Applied Physics
Том 11
Первая страница 29
Последняя страница 34
Аффилиация Hanzaz M.; LPMM, Université Hassan II, Faculté des Sciences Aïn Chok Km 8, route El Jadida, BP 5366, Maârif, Casablanca, Morocco
Аффилиация Bouhdada A.; LPMM, Université Hassan II, Faculté des Sciences Aïn Chok Km 8, route El Jadida, BP 5366, Maârif, Casablanca, Morocco
Аффилиация Monroy E.; ETSI Telecommunicacion, Universitad Politecnica de Madrid, 28040 Madrid, Spain
Аффилиация Muñoz E.; ETSI Telecommunicacion, Universitad Politecnica de Madrid, 28040 Madrid, Spain
Аффилиация Gibart P.; CRHEA-CNRS, parc Sophia Antipolis, rue Bernard Gregory, 06560 Valbonne, France
Аффилиация Omnès F.; CRHEA-CNRS, parc Sophia Antipolis, rue Bernard Gregory, 06560 Valbonne, France
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