| Автор | Herberholz, R. |
| Автор | Rau, U. |
| Автор | Schock, H. W. |
| Автор | Haalboom, T. |
| Автор | Gödecke, T. |
| Автор | Ernst, F. |
| Автор | Beilharz, C. |
| Автор | Benz, K. W. |
| Автор | Cahen, D. |
| Дата выпуска | 1999 |
| dc.description | A reinvestigation of the phase diagram of the Cu–In–Se system along the quasi-binary cut In<sub>2</sub>Se<sub>3</sub>–Cu<sub>2</sub>Se reveals an existence range of the chalcopyrite α-phase that is much narrower than commonly accepted. The presence of 0.1% of Na or replacement of In by Ga at the at.% level widens the existence range of the α-phase, towards In- and Ga-rich compositions. We also investigate the interplay between phase segregation and junction formation in polycrystalline Cu(In, Ga)Se<sub>2</sub> films. Here, we attribute the band bending observed at bare surfaces of the films to a positively charged surface acting as a driving force for the formation of a Cu-poor surface defect layer via Cu-electromigration. The electrical properties of this defect layer are different from those found for the bulk β-phase. We suggest that Cu-depletion is self-limited at the observed In/(In+Cu) surface composition of 0.75 because further Cu-depletion would require a structural transformation. Capacitance measurements reveal two types of junction metastabilities: one resulting from local defect relaxation, invoked to explain a light-induced increase of the open-circuit voltage of Cu(In, Ga)Se<sub>2</sub> solar cells, and one due to Cu-electromigration. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1999 |
| Название | Phase segregation, Cu migration and junction formation in Cu(In, Ga)Se<sub>2</sub> |
| Тип | research-article |
| DOI | 10.1051/epjap:1999162 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 6 |
| Первая страница | 131 |
| Последняя страница | 139 |
| Аффилиация | Herberholz R.; Institut für Physikalische Elektronik (IPE), Universität Stuttgart, 70569 Stuttgart, Germany |
| Аффилиация | Rau U.; Institut für Physikalische Elektronik (IPE), Universität Stuttgart, 70569 Stuttgart, Germany |
| Аффилиация | Schock H. W.; Institut für Physikalische Elektronik (IPE), Universität Stuttgart, 70569 Stuttgart, Germany |
| Аффилиация | Haalboom T.; Max-Planck-Institut für Metallforschung, 70174 Stuttgart, Germany |
| Аффилиация | Gödecke T.; Max-Planck-Institut für Metallforschung, 70174 Stuttgart, Germany |
| Аффилиация | Ernst F.; Max-Planck-Institut für Metallforschung, 70174 Stuttgart, Germany |
| Аффилиация | Beilharz C.; Kristallographisches Institut, Universität Freiburg, 79104 Freiburg, Germany |
| Аффилиация | Benz K. W.; Kristallographisches Institut, Universität Freiburg, 79104 Freiburg, Germany |
| Аффилиация | Cahen D.; Weizmann Institute of Science, Dept. of Materials & Interfaces, Rehovot 76100, Israel |
| Выпуск | 2 |
