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Автор Bouchemat, T.
Автор Hobar, F.
Автор Koster, A.
Автор Laval, S.
Автор Bouchemat, M.
Автор Pascal, D.
Дата выпуска 1999
dc.description Silicon-On-Insulator waveguide can be used as photoconductor, the light being coupled in the silicon film by a diffraction grating. Nonlinear effects are induced by the photogeneration of electron-hole pairs. This leads to photocurrent variations which are much faster than in linear regime and also much steeper than the incident light pulse. A model is presented which takes into account the refractive index variations arising from both the excess carrier density and the temperature rise induced by carrier recombination and Joule effect. The photocurrent is calculated for various values of the incident light power, incidence angle and pulse duration.
Формат application.pdf
Издатель EDP Sciences
Копирайт © EDP Sciences, 1999
Название Theoretical study of a nonlinear fast silicon photoconductive switch
Тип research-article
DOI 10.1051/epjap:1999167
Electronic ISSN 1286-0050
Print ISSN 1286-0042
Журнал The European Physical Journal Applied Physics
Том 6
Первая страница 165
Последняя страница 169
Аффилиация Bouchemat T.; Institut d'Électronique, Université de Constantine, route d'Aïn el Bey, Constantine, Algeria
Аффилиация Hobar F.; Institut d'Électronique, Université de Constantine, route d'Aïn el Bey, Constantine, Algeria
Аффилиация Koster A.; Institut d'Électronique Fondamentale (CNRS URA 22), Bâtiment 220, Université Paris Sud, 91405 Orsay Cedex, France
Аффилиация Laval S.; Institut d'Électronique Fondamentale (CNRS URA 22), Bâtiment 220, Université Paris Sud, 91405 Orsay Cedex, France
Аффилиация Bouchemat M.; Institut d'Électronique, Université de Constantine, route d'Aïn el Bey, Constantine, Algeria
Аффилиация Pascal D.; Institut d'Électronique Fondamentale (CNRS URA 22), Bâtiment 220, Université Paris Sud, 91405 Orsay Cedex, France
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