Suppression of the “notch effect” in microwave surface resistance in YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub> films on MgO (100) substrate by deposition of ultra-thin SrTiO<sub>3</sub> seed layers
Contour, J.-P.; Couvert, C.; Durand, O.; Lemaître, Y.; Lyonnet, R.; Marcilhac, B.; Contour J.-P.; Unité Mixte de Physique CNRS / Thomson-CSF, 91404 Orsay, France; Couvert C.; Unité Mixte de Physique CNRS / Thomson-CSF, 91404 Orsay, France; Durand O.; LCR / Thomson-CSF, 91404 Orsay, France; Lemaître Y.; Unité Mixte de Physique CNRS / Thomson-CSF, 91404 Orsay, France; Lyonnet R.; Unité Mixte de Physique CNRS / Thomson-CSF, 91404 Orsay, France; Marcilhac B.; Unité Mixte de Physique CNRS / Thomson-CSF, 91404 Orsay, France
Журнал:
The European Physical Journal Applied Physics
Дата:
1999
Аннотация:
RHEED controlled ultra-thin buffer layers of SrTiO<sub>3</sub> have been deposited on (100) MgO by pulsed laser deposition to growth YBaCuO films for microwave applications. A buffer layer with a thickness between 2 and 15 nm, i.e. 5 to 40 unit cells of SrTiO<sub>3</sub>, is sufficient to expand to more than 60 °C the range of deposition temperatures leading to low microwave surface resistance. The Rs values are as good as those obtained on LaAlO<sub>3</sub> substrates with a slighly lower magnetic field dependency. The SrTiO<sub>3</sub> seed layer induces an oriented epitaxial growth with YBCO [100] // MgO [100] over this range of deposition temperatures.
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