| Автор | Rousset, V. |
| Автор | Joachim, C. |
| Автор | Ondarçuhu, T. |
| Автор | Rousset, B. |
| Дата выпуска | 1998 |
| dc.description | Planar metal/semiconductor/metal (PMSM) junctions buried in a SiO<sub>2</sub> layer are fabricated using electron beam lithography on a silicon sample. A technique of jump of pixels is used to obtain different sizes of junctions, the smallest having an inter-electrode distance of 5 nm. The current-voltage characteristics and the variation of the junction conductance with the temperature down to 8 K have been studied. At all sizes and for both polarities, the I−V curves correspond to the reverse characteristic of a metal/semiconductor contact. At low bias voltage, the influence of a thin insulator interfacial layer between the metal and the semiconductor has been pointed out. For these junctions, a non-linear low voltage I−V characteristics is observed before the large voltage thermionic emission regime. For the smallest junctions obtained without interfacial oxide layer, a linear I−V characteristic is recovered at low voltage. Their conductance can be lowered by decreasing the temperature. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1998 |
| Название | I−V characteristics of co-planar metal-semiconductor-metal nanojunctions |
| Тип | research-article |
| DOI | 10.1051/epjap:1998199 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 3 |
| Первая страница | 21 |
| Последняя страница | 28 |
| Аффилиация | Rousset V.; CEMES-LOE/CNRS, 29 rue J. Marvig, BP 4347, 31055 Toulouse Cedex, France |
| Аффилиация | Joachim C.; CEMES-LOE/CNRS, 29 rue J. Marvig, BP 4347, 31055 Toulouse Cedex, France |
| Аффилиация | Ondarçuhu T.; CEMES-LOE/CNRS, 29 rue J. Marvig, BP 4347, 31055 Toulouse Cedex, France |
| Аффилиация | Rousset B.; LAAS/CNRS, 7 avenue du Colonel Roche, 31077 Toulouse Cedex, France |
| Выпуск | 1 |
