| Автор | Kaabi, L. |
| Автор | Ben Brahim, J. |
| Автор | Remaki, B. |
| Автор | Gontrand, C. |
| Автор | El Omari, H. |
| Автор | Bureau, J.-C. |
| Автор | Sassi, Z. |
| Автор | Balland, B. |
| Дата выпуска | 1998 |
| dc.description | The present study deals with the investigation of electrically active damage induced by direct and through protecting oxide layer implantation of <sup>11</sup>B<sup>+</sup> ions. The residual defects have been determined by means of Deep Level Transient Spectroscopy (DLTS). It has been found that the number of defects is practically reduced to one centre when the implantation is performed through an oxide layer. The defect spectrum evolution, under the effect of the implant mass and the RTA treatments, has been also investigated. The defect generation kinetics, under annealing treatments, is found strongly depending on <sup>11</sup>B<sup>+</sup> ionic number reaching the substrate. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1998 |
| Название | The residual electrically active damage in low energy boron implanted silicon: rapid thermal annealing and implant mass effects* |
| Тип | research-article |
| DOI | 10.1051/epjap:1998203 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 3 |
| Первая страница | 49 |
| Последняя страница | 52 |
| Аффилиация | Kaabi L.; Institut National des Sciences Appliquées et de Technologie, Département de Génie Physique et Instrumentation, Centre Urbain Nord, BP 676, 1080 Tunis Cedex, Tunisia ; Laboratoire de Physique de la Matière (U.M.R., C.N.R.S.) C55-11, Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France |
| Аффилиация | Ben Brahim J.; Institut National des Sciences Appliquées et de Technologie, Département de Génie Physique et Instrumentation, Centre Urbain Nord, BP 676, 1080 Tunis Cedex, Tunisia |
| Аффилиация | Remaki B.; Laboratoire de Physique de la Matière (U.M.R., C.N.R.S.) C55-11, Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France |
| Аффилиация | Gontrand C.; Laboratoire de Physique de la Matière (U.M.R., C.N.R.S.) C55-11, Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France |
| Аффилиация | El Omari H.; Laboratoire de Physique de la Matière (U.M.R., C.N.R.S.) C55-11, Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France |
| Аффилиация | Bureau J.-C.; Laboratoire de Thermodynamique Appliquée (C.N.R.S. - U.P.R.E.S.-A), Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France |
| Аффилиация | Sassi Z.; Laboratoire de Thermodynamique Appliquée (C.N.R.S. - U.P.R.E.S.-A), Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France |
| Аффилиация | Balland B.; Laboratoire de Physique de la Matière (U.M.R., C.N.R.S.) C55-11, Institut National des Sciences Appliquées de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France |
| Выпуск | 1 |
