| Автор | Daouahi, M. |
| Автор | Zellama, K. |
| Автор | Bouchriha, H. |
| Автор | Elkaïm, P. |
| Дата выпуска | 2000 |
| dc.description | The nature of the hydrogen bonding and content and their influence on the film microstructure have been investigated in detail, as a function of the H<sub>2</sub> dilution and the residual pressure, in hydrogenated amorphous silicon (a-Si:H) films prepared by radiofrequency (rf) magnetron sputtering at a common substrate temperature (~ 250 °C) and pressure (5 × 10<sup>−4</sup> torr) and high rates (11−15 Å/s). H<sub>2</sub> percentages in the gas phase mixture (Ar + % H<sub>2</sub>) of 5, 10, 15 and 20% have been introduced during growth. For the 20% of H<sub>2</sub>, two different pressures of 5 × 10<sup>−4</sup> and 50 × 10<sup>−4</sup> torr were used. A combination of infrared absorption, optical transmission and elastic recoil detection analysis experiments have been carried out to fully characterize the samples in their as-deposited state. The results clearly indicate that for H<sub>2</sub> percentage equal to or lower than 15% , the total bonded H content in the films increases as the H<sub>2</sub> percentage increases, and then reaches a saturation value or even decreases for higher H<sub>2</sub> percentage. Moreover, the microstructure is also found to be deeply affected by the H<sub>2</sub> dilution and pressure. In particular, for high H<sub>2</sub> percentage (20%) and high pressure (50 × 10<sup>−4</sup> torr), unbounded H as well as polyhydride (Si-H<sub>2</sub>)<sub> n </sub> chains, possibly located in structural inhomogeneities such as voids, are also present in the films in addition to the isolated monohydride Si-H and polyhydride Si-H<sub>2</sub> complexes. As a result, a reduction of the compactness of the film structure associated with a decrease of the refractive index n is observed. The optical gap is found to be rather controlled by the total bonded hydrogen content. The lowest proportion of isolated polyhydride Si-H<sub>2</sub> complexes and the highest density are observed for films deposited with 10% of H<sub>2</sub> in the gas phase and a pressure of 5 × 10<sup>−4</sup> torr. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 2000 |
| Название | Effect of the hydrogen dilution on the local microstructure in hydrogenated amorphous silicon films deposited by radiofrequency magnetron sputtering |
| Тип | research-article |
| DOI | 10.1051/epjap:2000131 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 10 |
| Первая страница | 185 |
| Последняя страница | 191 |
| Аффилиация | Daouahi M.; Faculté des Sciences de Bizerte, Zarzouna, Bizerte, Tunisia |
| Аффилиация | Zellama K.; Laboratoire de Physique de la Matière Condensée, Faculté des Sciences d'Amiens, 33 rue Saint-Leu, 80039 Amiens Cedex, France |
| Аффилиация | Bouchriha H.; Faculté des Sciences de Tunis, Campus Universitaire Elmenzeh, 1060 Tunis, Tunisia |
| Аффилиация | Elkaïm P.; Laboratoire de Physique des Solides de Bellevue, CNRS, 1 place Aristide Briand, 92195 Meudon Cedex, France |
| Выпуск | 3 |
