| Автор | Parman, C. |
| Автор | Kakalios, J. |
| Дата выпуска | 1991 |
| dc.description | ABSTRACTMeasurements of co-planar current fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) find that the spectral density of the noise accurately obeys a 1/f frequency dependence over the frequency range of 1 Hz to 1 kHz for temperatures ranging from room temperature to 450K. The noise displays a power law dependence on the d.c. curent passing through the sample, with a temperature dependent power law exponent. In addition, the resistance of the a-Si:H as a function of time displays switching phenomena; a surprising result given the effective volume ( ∼10<sup>-6</sup> cm<sup>3</sup>) of the sample. |
| Формат | application.pdf |
| Издатель | Cambridge University Press |
| Копирайт | Copyright © Materials Research Society 1991 |
| Название | 1 / f Noise in Hydrogenated Amorphous Silicon |
| Тип | research-article |
| DOI | 10.1557/PROC-219-235 |
| Electronic ISSN | 1946-4274 |
| Print ISSN | 0272-9172 |
| Журнал | MRS Proceedings |
| Том | 219 |
| Аффилиация | Parman C.; School of Physics and Astronomy |
| Аффилиация | Kakalios J.; School of Physics and Astronomy |
