Magneto-Optical Study of Negative Persistent Photo-Effect in InAs/Al<sub>o.5</sub>Ga<sub>0.5</sub>Sb Quantum Wells
Cheng, J.-P.; Lo, Ikai; Mitchel, W.C.; Cheng J.-P.; Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139; Lo Ikai; WL/MLPO, Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433-6533; National Sun Yat-Sen University; Mitchel W.C.; WL/MLPO, Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433-6533
Журнал:
MRS Proceedings
Дата:
1993
Аннотация:
AbstractCyclotron resonance (CR) of electrons confined in an InAsZAl<sub>o.5</sub>Ga<sub>o.5</sub>Sb quantum well has been used to investigate the negative persistent photo-effect (NPP) at low temperatures. After an in situ cross-gap light illumination, the electron density is reduced 28%, and the CR effective mass decreases from (0.0342±0.0002)m<sub>o</sub> to (0.0322±0.0002)m<sub>o</sub>. The response time of the NPP build-up transient has been studied via the photon-dose technique, and it is on the order of 10 msec with an illumination power flux of ~ 10mW/cm<sup>2</sup>.
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