| Автор | Tsu, D. V. |
| Автор | Kim, S. S. |
| Автор | Theil, J. A. |
| Автор | Wang, Cheng |
| Автор | Lucovsky, G. |
| Дата выпуска | 1989 |
| dc.description | AbstractWe have deposited thin films of silicon dioxide, SiO<sub>2</sub>, and amorphous silicon, a- Si, by remote Plasma-Enhanced Chemical-Vapor Deposition (Remote PECVD), and have extended this process to the deposition of silicon suboxides, SiO<sub>x</sub>, 0<x<2. Heterostructures, comprised of alternating layers of SiO <sub>2</sub>, and SiO<sub>x</sub>, x∼1, have been deposited by electronically controlling the flow of charged particles from the plasmageneration region into the deposition chamber, without interrupting the flow of process gases. We discuss the electrical properties of these heterojunction structures. |
| Формат | application.pdf |
| Издатель | Cambridge University Press |
| Копирайт | Copyright © Materials Research Society 1990 |
| Название | Formation of Multilayer SiO<sub>2</sub>- SiO<sub>x</sub> Heterostructures by Control of Reaction Pathways in Remote PECVD |
| Тип | research-article |
| DOI | 10.1557/PROC-165-209 |
| Electronic ISSN | 1946-4274 |
| Print ISSN | 0272-9172 |
| Журнал | MRS Proceedings |
| Том | 165 |
| Аффилиация | Tsu D. V.; North Carolina State University |
| Аффилиация | Kim S. S.; North Carolina State University |
| Аффилиация | Theil J. A.; North Carolina State University |
| Аффилиация | Wang Cheng; North Carolina State University |
| Аффилиация | Lucovsky G.; North Carolina State University |
