| Автор | Tung, R. T. |
| Автор | Hellman, F. |
| Дата выпуска | 1987 |
| dc.description | ABSTRACTTwo distinctively different structures were found on CoSi<sub>2</sub>(111), the CoSi<sub>2</sub>-C and the CoSi<sub>2</sub>-S, which correspond to, respectively, an essentially bulk-terminated surface and one which consists of an additional Si double layer. Details of the two structures suggest new growth techniques for Si epitaxy. Single crystal Si layers with either identical orientation as the silicide or a 180°-rotated orientation can be fabricated by use of carefully designed Si templates. |
| Формат | application.pdf |
| Издатель | Cambridge University Press |
| Копирайт | Copyright © Materials Research Society 1987 |
| Название | The Effect of Surface Structure on the Epitaxial Growth of Si on CoSi<sub>2</sub>(111) |
| Тип | research-article |
| DOI | 10.1557/PROC-94-65 |
| Electronic ISSN | 1946-4274 |
| Print ISSN | 0272-9172 |
| Журнал | MRS Proceedings |
| Том | 94 |
| Аффилиация | Tung R. T.; AT&T Bell Laboratories, Murray Hill, NJ 07974 |
| Аффилиация | Hellman F.; AT&T Bell Laboratories, Murray Hill, NJ 07974 |
