The reaction between a TiNi shape memory thin film and silicon
Stemmer, Susanne; Duscher, Gerd; Scheu, Christina; Heuer, Arthur H.; Rühle, Manfred; Stemmer Susanne; Case Western Reserve University; Duscher Gerd; Institut für Werkstoffwissenschaft; Scheu Christina; Institut für Werkstoffwissenschaft; Heuer Arthur H.; Case Western Reserve University; Rühle Manfred; Institut für Werkstoffwissenschaft
Журнал:
Journal of Materials Research
Дата:
1997
Аннотация:
The reaction between shape-memory TiNi thin films and silicon has been characterized by conventional, analytical, and high-resolution transmission electron microscopy. A reaction layer is formed during the 525 °C post-deposition crystallization anneal of the sputter-deposited TiNi, and consists of several phases: Ti<sub>2</sub>Ni, a nickel silicide, and a ternary titanium nickel silicide. The mechanism for the interlayer formation is discussed.
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