| Автор | Stemmer, Susanne |
| Автор | Duscher, Gerd |
| Автор | Scheu, Christina |
| Автор | Heuer, Arthur H. |
| Автор | Rühle, Manfred |
| Дата выпуска | 1997 |
| dc.description | The reaction between shape-memory TiNi thin films and silicon has been characterized by conventional, analytical, and high-resolution transmission electron microscopy. A reaction layer is formed during the 525 °C post-deposition crystallization anneal of the sputter-deposited TiNi, and consists of several phases: Ti<sub>2</sub>Ni, a nickel silicide, and a ternary titanium nickel silicide. The mechanism for the interlayer formation is discussed. |
| Формат | application.pdf |
| Издатель | Cambridge University Press |
| Копирайт | Copyright © Materials Research Society 1997 |
| Название | The reaction between a TiNi shape memory thin film and silicon |
| Тип | research-article |
| DOI | 10.1557/JMR.1997.0239 |
| Electronic ISSN | 2044-5326 |
| Print ISSN | 0884-2914 |
| Журнал | Journal of Materials Research |
| Том | 12 |
| Первая страница | 1734 |
| Последняя страница | 1740 |
| Аффилиация | Stemmer Susanne; Case Western Reserve University |
| Аффилиация | Duscher Gerd; Institut für Werkstoffwissenschaft |
| Аффилиация | Scheu Christina; Institut für Werkstoffwissenschaft |
| Аффилиация | Heuer Arthur H.; Case Western Reserve University |
| Аффилиация | Rühle Manfred; Institut für Werkstoffwissenschaft |
| Выпуск | 7 |
