Effects of the band offset on interfacial deep levels
Beres, Richard P.; Allen, Roland E.; Dow, John D.; Beres Richard P.; Department of Physics, Texas A & M University, College Station, Texas, 77843; Allen Roland E.; Department of Physics, University of Notre Dame<sup>b)</sup> Notre Dame, Indiana 46556 and Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455; Dow John D.; Department of Physics, University of Notre Dame<sup>b)</sup> Notre Dame, Indiana 46556 and Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
Журнал:
Journal of Materials Research
Дата:
1988
Аннотация:
The energy levels of antisite defects at a GaAs/Ge (110) interface are calculated and shown to be essentially unaltered with respect to the GaAs valence band maximum by different choices of the valence band offset.
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