| Автор | Beres, Richard P. |
| Автор | Allen, Roland E. |
| Автор | Dow, John D. |
| Дата выпуска | 1988 |
| dc.description | The energy levels of antisite defects at a GaAs/Ge (110) interface are calculated and shown to be essentially unaltered with respect to the GaAs valence band maximum by different choices of the valence band offset. |
| Формат | application.pdf |
| Издатель | Cambridge University Press |
| Копирайт | Copyright © Materials Research Society 1988 |
| Название | Effects of the band offset on interfacial deep levels |
| Тип | research-article |
| DOI | 10.1557/JMR.1988.0164 |
| Electronic ISSN | 2044-5326 |
| Print ISSN | 0884-2914 |
| Журнал | Journal of Materials Research |
| Том | 3 |
| Первая страница | 164 |
| Последняя страница | 166 |
| Аффилиация | Beres Richard P.; Department of Physics, Texas A & M University, College Station, Texas, 77843 |
| Аффилиация | Allen Roland E.; Department of Physics, University of Notre Dame<sup>b)</sup> Notre Dame, Indiana 46556 and Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 |
| Аффилиация | Dow John D.; Department of Physics, University of Notre Dame<sup>b)</sup> Notre Dame, Indiana 46556 and Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 |
| Выпуск | 1 |
