Electrical conduction of silicon nitride films
POPOVA, LILIANA; ANTOV, BOZHIDAR; VITANOV, PETKO; POPOVA, LILIANA; Institute of Microelectronics; ANTOV, BOZHIDAR; Institute of Microelectronics; VITANOV, PETKO; Institute of Microelectronics
Журнал:
International Journal of Electronics
Дата:
1979
Аннотация:
Current-voltage characteristics were measured on MNS capacitors with two kinds of nitride layer. For positive gate voltage the chloride-type nitride exhibits dominant bulk-limited electron conduction, while the silane-type nitride exhibits two-band conduction. For negative gate voltage both kinds of nitride exhibit dominant hole conduction resulting from a massive hole injection and trapping. Recently promised models are used to interpret the experimental results.
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