| Автор | POPOVA, LILIANA |
| Автор | ANTOV, BOZHIDAR |
| Автор | VITANOV, PETKO |
| Дата выпуска | 1979 |
| dc.description | Current-voltage characteristics were measured on MNS capacitors with two kinds of nitride layer. For positive gate voltage the chloride-type nitride exhibits dominant bulk-limited electron conduction, while the silane-type nitride exhibits two-band conduction. For negative gate voltage both kinds of nitride exhibit dominant hole conduction resulting from a massive hole injection and trapping. Recently promised models are used to interpret the experimental results. |
| Формат | application.pdf |
| Издатель | Taylor & Francis Group |
| Копирайт | Copyright Taylor and Francis Group, LLC |
| Название | Electrical conduction of silicon nitride films |
| Тип | research-article |
| DOI | 10.1080/00207217908901032 |
| Electronic ISSN | 1362-3060 |
| Print ISSN | 0020-7217 |
| Журнал | International Journal of Electronics |
| Том | 46 |
| Первая страница | 487 |
| Последняя страница | 495 |
| Аффилиация | POPOVA, LILIANA; Institute of Microelectronics |
| Аффилиация | ANTOV, BOZHIDAR; Institute of Microelectronics |
| Аффилиация | VITANOV, PETKO; Institute of Microelectronics |
| Выпуск | 5 |
