A mechanism of amorphization-crystallization processes in irradiated semiconductors
Verner, I. V.; Tsukanov, V. V.; Verner, I. V.; Moscow Institute of Electronic Technology; Tsukanov, V. V.; Moscow Institute of Electronic Technology
Журнал:
Radiation Effects and Defects in Solids
Дата:
1989
Аннотация:
AbstractA possible atomic mechanism of amorphization-crystallization processes in irradiated diamond-type semiconductors is proposed in the present work. This mechanism is based on the concept of a phase transition into a new state with participation of point defects and can be considered as a basis for the kinetic description of amorphization-crystallization processes in semiconductors during irradiation.
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