30 keV to 2 MeV Boron implantation profiles in solids
Fink, D.; Wang, L.; Biersack, J. P.; Jahnel, F.; Fink, D.; Hahn-Meitner-Inst.; Wang, L.; Hahn-Meitner-Inst.; On leave from Institute of Semiconductors, Academia Sinica; Biersack, J. P.; Hahn-Meitner-Inst.; Jahnel, F.; Institut für Radiochemie, TU München; <sup>d</sup> HL PL 44 Siemens AG., Otto Hahn Ring 6, D-8000, München, 83, Germany
Журнал:
Radiation Effects and Defects in Solids
Дата:
1990
Аннотация:
AbstractBoron was implanted into several solids in the dose regime 10<sup>14</sup> to 10<sup>16</sup> ions/cm<sup>2</sup> and at energies between some 10 keV and some MeV. Measurements of the corresponding depth distributions were performed by means of the <sup>10</sup>B(n, α<sub>0</sub>)<sup>7</sup>Li(gnd) and <sup>10</sup>B(n, α<sub>1</sub>)<sup>7</sup>Li*(1st) nuclear reaction techniques with thermal neutrons, and by SIMS. The results are compared to theoretical predictions.
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