Stacking faults and phase transformations in silicon nitride
Milhet, X.; Demenet, J.-L.; Rabier, J.; Milhet X.; Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, UFR Sciences, SP2MI, Boulevard 3, Téléport 2, 86960 Futuroscope Cedex, France; Demenet J.-L.; Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, UFR Sciences, SP2MI, Boulevard 3, Téléport 2, 86960 Futuroscope Cedex, France; Rabier J.; Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, UFR Sciences, SP2MI, Boulevard 3, Téléport 2, 86960 Futuroscope Cedex, France
Журнал:
The European Physical Journal Applied Physics
Дата:
1998
Аннотация:
From observations of extended dislocation nodes in β silicon nitride, possible stacking fault structures in the basal plane of this compound have been investigated. It has been found that stacking fault structure is locally analogous to α silicon nitride. A phase transformation α to β or β to α can also be achieved by cooperative shear of partial dislocations with $1/3\langle1\bar{1}00\rangle$ Burgers vectors.
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