| Автор | Dollfus, Ph. |
| Автор | Galdin, S. |
| Автор | Hesto, P. |
| Дата выпуска | 1999 |
| dc.description | Electron transport properties in tensile strained Si-based materials are theoretically analyzed using Monte-Carlo calculation. We focus our interest on in-plane transport in Si and Si<sub>1−y </sub>C<sub> y </sub> (y ≤ 0.03), grown respectively on 〈001〉 Si<sub>1−x </sub>Ge<sub> x </sub> pseudo-substrate and Si substrate, with a view to Field-Effect-Transistor application. In comparison with unstrained Si, the tensile strain effect is shown to be very attractive in Si: drift mobilities greater than 3000 cm<sup>2</sup>/Vs are obtained at 300 K for a Ge fraction mole of 0.2 in the pseudo-substrate. In the Si<sub>1−y </sub>C<sub> y </sub>/Si system, that does not need any pseudo-substrate, the beneficial strain effect on transport is counterbalanced by the alloy scattering whose influence on mobility is studied. If the alloy potential is greater than about 1 eV, the advantage of strain-induced reduction of effective mass is lost in terms of stationary transport performance at 300 K. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1999 |
| Название | Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si<sub>1−y </sub>C<sub> y </sub> (y ≤ 0.03) |
| Тип | research-article |
| DOI | 10.1051/epjap:1999200 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 7 |
| Первая страница | 73 |
| Последняя страница | 77 |
| Аффилиация | Dollfus Ph.; Institut d'Électronique Fondamentale (URA 22 du CNRS), Université Paris-Sud, Bâtiment 220, 91405 Orsay Cedex, France |
| Аффилиация | Galdin S.; Institut d'Électronique Fondamentale (URA 22 du CNRS), Université Paris-Sud, Bâtiment 220, 91405 Orsay Cedex, France |
| Аффилиация | Hesto P.; Institut d'Électronique Fondamentale (URA 22 du CNRS), Université Paris-Sud, Bâtiment 220, 91405 Orsay Cedex, France |
| Выпуск | 1 |
