Conductivity in porous silicon*
Borgi, K.; Khirouni, K.; Mâaref, H.; Bourgoin, J. C.; Borgi K.; Laboratoire de Physique des Semiconducteurs, Département de Physique, Faculté des Sciences de Monastir, 5000 Monastir, Tunisia; Khirouni K.; Laboratoire de Physique des Semiconducteurs, Département de Physique, Faculté des Sciences de Monastir, 5000 Monastir, Tunisia; Mâaref H.; Laboratoire de Physique des Semiconducteurs, Département de Physique, Faculté des Sciences de Monastir, 5000 Monastir, Tunisia; Bourgoin J. C.; Groupe de Physique des Solides, Universités Paris 6 et Paris 7, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
Журнал:
The European Physical Journal Applied Physics
Дата:
1998
Аннотация:
Admittance spectroscopy has been performed on Al dots deposited on porous Silicon grown on p<sup>+</sup> substrates. They exhibit d.c. current-voltage characteristics of a metal-insulator-semiconductor structure containing a large concentration of localized states in the insulator. The admittance is composed of a frequency (ω) independent conductance while the reactance varies as ω <sup> s </sup> with s = 1. This strongly suggests that conduction through porous Silicon layers is governed by hopping between surface states.
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