| Автор | Borgi, K. |
| Автор | Khirouni, K. |
| Автор | Mâaref, H. |
| Автор | Bourgoin, J. C. |
| Дата выпуска | 1998 |
| dc.description | Admittance spectroscopy has been performed on Al dots deposited on porous Silicon grown on p<sup>+</sup> substrates. They exhibit d.c. current-voltage characteristics of a metal-insulator-semiconductor structure containing a large concentration of localized states in the insulator. The admittance is composed of a frequency (ω) independent conductance while the reactance varies as ω <sup> s </sup> with s = 1. This strongly suggests that conduction through porous Silicon layers is governed by hopping between surface states. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1998 |
| Название | Conductivity in porous silicon* |
| Тип | research-article |
| DOI | 10.1051/epjap:1998172 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 2 |
| Первая страница | 107 |
| Последняя страница | 110 |
| Аффилиация | Borgi K.; Laboratoire de Physique des Semiconducteurs, Département de Physique, Faculté des Sciences de Monastir, 5000 Monastir, Tunisia |
| Аффилиация | Khirouni K.; Laboratoire de Physique des Semiconducteurs, Département de Physique, Faculté des Sciences de Monastir, 5000 Monastir, Tunisia |
| Аффилиация | Mâaref H.; Laboratoire de Physique des Semiconducteurs, Département de Physique, Faculté des Sciences de Monastir, 5000 Monastir, Tunisia |
| Аффилиация | Bourgoin J. C.; Groupe de Physique des Solides, Universités Paris 6 et Paris 7, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France |
| Выпуск | 2 |
