Characteristics of Pt/PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub>/Pt and Au/PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub>/YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−δ </sub> capacitors after γ-ray irradiation
Gao, J.; Zheng, L.; Song, Z.; Lin, C.; Zhu, D.; Gao J.; Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences, Shanghai 201800, P.R. China ; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, the Chinese Academy of Sciences, Shanghai 200050, P.R. China; Zheng L.; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, the Chinese Academy of Sciences, Shanghai 200050, P.R. China; Song Z.; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, the Chinese Academy of Sciences, Shanghai 200050, P.R. China; Lin C.; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, the Chinese Academy of Sciences, Shanghai 200050, P.R. China; Zhu D.; Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences, Shanghai 201800, P.R. China
Журнал:
The European Physical Journal Applied Physics
Дата:
1999
Аннотация:
PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> (PZT) and YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−δ </sub> (YBCO) thin films were fabricated by a pulsed laser deposition (PLD) method. The Pt/PZT/Pt ferroelectric capacitors were fabricated on silicon substrates while the Au/PZT/YBCO capacitors were fabricated on LaAlO<sub>3</sub> substrates. The capacitance-voltage (C-V) properties and the hysteresis loops of the capacitors were measured before and after γ-ray irradiation. The results show that for Pt/PZT/Pt capacitors, the remanent polarization P <sub>r</sub> and the absolute coercive field E <sub>C</sub> increase while the dielectric constant ε decrease with increasing accumulated dose. For the Au/PZT/YBCO capacitors, P <sub>r</sub> and ε decreased with accumulated dose, but the absolute value of the negative and positive coercive fields increased. The results have been interpreted by radiation-induced positive charge trapping at defects in the ferroelectric materials.
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